DATE2026.04.17 #Press Releases

Theoretical prediction of tunnel magnetoresistance effect using antiferromagnetic materials

Disclaimer: machine translated by DeepL which may contain errors.

Contributing to the development of next-generation high-density, ultra-high-speed magnetic memory

Mn₃Sn/MgO/Mn₃Sn magnetic tunnel junction.

Summary

Katsuhiro Tanaka, Project Assistant Professor (at the time of the research), Susumu Minami, Project Assistant Professor (at the time of the research), Professor Satoru Nakatsuji, Professor Ryotaro Arita (also Team Director, Center for Emergent Matter Science, RIKEN), Department of Physics, Graduate School of Science, The University of Tokyo; Yuta Toga, Researcher, RD Technology and Digital Transformation Center, JSR Corporation, Associate Professor Takuya Nomoto, Department of Physics, Graduate School of Science, Tokyo Metropolitan University, and Professor Takashi Koretsune, Department of Physics, Graduate School of Science, Tohoku University, have designed a magnetic tunnel junction (MTJ) combining a non-collinear antiferromagnet Mn₃Sn and magnesium oxide using first-principles calculation and predicted that a large tunnel magnetoresistance (TMR) effect would emerge. This achievement will guide the design and development of antiferromagnetic tunnel junction devices and is expected to lead to the future development of high-density nonvolatile magnetic memory that operates at ultrahigh speed and low power consumption.

This research result was published in Physical Review Materials on April 16, 2026, and was selected as an Editors' Suggestion.

The research results were obtained through joint research between The University of Tokyo and JSR Corporation, and through research activities in the Social Cooperation Program "Topological Materials and Devices Creation Program.

Publication Information

Journal name	Physical Review Materials
Title of paper	Ab initio study of magnetoresistance effect in Mn3Sn/MgO/Mn3Sn antiferromagnetic tunnel junction
Authors	Katsuhiro Tanaka, Yuta Toga, Susumu Minami, Satoru Nakatsuji, Takuya Nomoto, Takashi Koretsune, and Ryotaro Arita
DOI	10.1103/xt7z-sf3x